STP5N60M2 MOSFET Transistor

The STP5N60M2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP5N60M2 transistor as follows.

STP5N60M2 Transistor Specification

Transistor Code		STP5N60M2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Transistor SMD Code		5N60M2
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	3.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.4Ohm
Power Dissipation (Maximum)	PD	45W
Drain-Source Capacitance		13pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		3nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		8.5nC

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