STP55NE06 MOSFET Transistor

The STP55NE06 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP55NE06 transistor as follows.

STP55NE06 Transistor Specification

Transistor Code		STP55NE06
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Transistor SMD Code		P55NE06
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	55A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.022Ohm
Power Dissipation (Maximum)	PD	130W
Drain-Source Capacitance		380pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		120nS
Total Gate Charge		80nC

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