STP50NE08 MOSFET Transistor

The STP50NE08 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP50NE08 transistor as follows.

STP50NE08 Transistor Specification

Transistor Code		STP50NE08
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.024Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		480pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		95nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		85nC

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