STP4NB100 MOSFET Transistor

The STP4NB100 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP4NB100 transistor as follows.

STP4NB100 Transistor Specification

Transistor Code		STP4NB100
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	1000V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	3.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	4.4Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		117pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		32nC

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