STP4N150 MOSFET Transistor

The STP4N150 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP4N150 transistor as follows.

STP4N150 Transistor Specification

Transistor Code		STP4N150
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	1500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	3.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	7Ohm
Power Dissipation (Maximum)	PD	160W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		30nC

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