STP3N60XI MOSFET Transistor

The STP3N60XI is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP3N60XI transistor as follows.

STP3N60XI Transistor Specification

Transistor Code		STP3N60XI
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ISOWATT221
Drain-Source Voltage (Maximum)	VDS	600V
Drain Current (Maximum)	ID	2.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.5Ohm
Power Dissipation (Maximum)	PD	28W
Operating Junction Temperature (Maximum)		150°C

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