STP3N50XI MOSFET Transistor

The STP3N50XI is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP3N50XI transistor as follows.

STP3N50XI Transistor Specification

Transistor Code		STP3N50XI
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ISOWATT221
Drain-Source Voltage (Maximum)	VDS	500V
Drain Current (Maximum)	ID	1.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	4Ohm
Power Dissipation (Maximum)	PD	25W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		25nC

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