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STP35N10 MOSFET Transistor

The STP35N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP35N10 transistor as follows.

Circuit diagram symbol of the STP35N10 transistor

STP35N10 Transistor Specification

Transistor Code STP35N10
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 35A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.036Ohm
Power Dissipation (Maximum) PD 75W
Drain-Source Capacitance 155pF
Total Gate Charge 100nC

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