STP265N6F6AG MOSFET Transistor

The STP265N6F6AG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP265N6F6AG transistor as follows.

STP265N6F6AG Transistor Specification

Transistor Code		STP265N6F6AG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Transistor SMD Code		265N6F6
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	180A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.00285Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		1235pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		165nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		183nC

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