STP25N10F7 MOSFET Transistor

The STP25N10F7 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP25N10F7 transistor as follows.

STP25N10F7 Transistor Specification

Transistor Code		STP25N10F7
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Transistor SMD Code		25N10F7
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	25A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.035Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		215pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		14nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		14nC

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