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STP24N65M2 MOSFET Transistor

The STP24N65M2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP24N65M2 transistor as follows.

Circuit diagram symbol of the STP24N65M2 transistor

STP24N65M2 Transistor Specification

Transistor Code STP24N65M2
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Transistor SMD Code 24N65M2
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 16A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.23Ohm
Power Dissipation (Maximum) PD 150W
Drain-Source Capacitance 47.5pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 9.5nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 29nC

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