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STP21NM50N MOSFET Transistor

The STP21NM50N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP21NM50N transistor as follows.

Circuit diagram symbol of the STP21NM50N transistor

STP21NM50N Transistor Specification

Transistor Code STP21NM50N
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Transistor SMD Code P21NM50N
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 18A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.19Ohm
Power Dissipation (Maximum) PD 140W
Drain-Source Capacitance 420pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 18nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 65nC

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