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STP20NE06L MOSFET Transistor

The STP20NE06L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP20NE06L transistor as follows.

Circuit diagram symbol of the STP20NE06L transistor

STP20NE06L Transistor Specification

Transistor Code STP20NE06L
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 20A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.085Ohm
Power Dissipation (Maximum) PD 70W
Drain-Source Capacitance 125pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 45nS
Gate-Threshold Voltage (Maximum) 1V
Total Gate Charge 14nC

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