STP20N65M5 MOSFET Transistor

The STP20N65M5 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP20N65M5 transistor as follows.

STP20N65M5 Transistor Specification

Transistor Code		STP20N65M5
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Transistor SMD Code		20N65M5
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.19Ohm
Power Dissipation (Maximum)	PD	130W
Drain-Source Capacitance		38pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7.5nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		36nC

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