STP1N105K3 MOSFET Transistor

The STP1N105K3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP1N105K3 transistor as follows.

STP1N105K3 Transistor Specification

Transistor Code		STP1N105K3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Transistor SMD Code		1N105K3
Drain-Source Voltage (Maximum)	VDS	1050V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	11Ohm
Power Dissipation (Maximum)	PD	60W
Drain-Source Capacitance		15pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		13nC

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