STP19N05L MOSFET Transistor

The STP19N05L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP19N05L transistor as follows.

STP19N05L Transistor Specification

Transistor Code		STP19N05L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	50V
Gate-Source Voltage (Maximum)	VGS	15V
Drain Current (Maximum)	ID	19A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.1Ohm
Power Dissipation (Maximum)	PD	85W
Drain-Source Capacitance		200pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		80nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		18nC

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