STP190N55LF3 MOSFET Transistor

The STP190N55LF3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP190N55LF3 transistor as follows.

STP190N55LF3 Transistor Specification

Transistor Code		STP190N55LF3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	18V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0037Ohm
Power Dissipation (Maximum)	PD	312W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		60nC

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