STP18N10FI MOSFET Transistor

The STP18N10FI is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP18N10FI transistor as follows.

STP18N10FI Transistor Specification

Transistor Code		STP18N10FI
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ISOWATT220
Drain-Source Voltage (Maximum)	VDS	100V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.14Ohm
Power Dissipation (Maximum)	PD	40W
Operating Junction Temperature (Maximum)		150°C

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