STP170N8F7 MOSFET Transistor

The STP170N8F7 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP170N8F7 transistor as follows.

STP170N8F7 Transistor Specification

Transistor Code		STP170N8F7
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Transistor SMD Code		170N8F7
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0039Ohm
Power Dissipation (Maximum)	PD	250W
Drain-Source Capacitance		1330pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		53nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		120nC

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