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STP15NM60N MOSFET Transistor

The STP15NM60N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP15NM60N transistor as follows.

Circuit diagram symbol of the STP15NM60N transistor

STP15NM60N Transistor Specification

Transistor Code STP15NM60N
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Transistor SMD Code P15NM60N
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 14A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.299Ohm
Power Dissipation (Maximum) PD 125W
Drain-Source Capacitance 100pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 14nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 37nC

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