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STP13N65M2 MOSFET Transistor

The STP13N65M2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP13N65M2 transistor as follows.

Circuit diagram symbol of the STP13N65M2 transistor

STP13N65M2 Transistor Specification

Transistor Code STP13N65M2
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Transistor SMD Code 13N65M2
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.43Ohm
Power Dissipation (Maximum) PD 110W
Drain-Source Capacitance 27.5pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 7.8nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 17nC

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