STP130N10F3 MOSFET Transistor

The STP130N10F3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP130N10F3 transistor as follows.

STP130N10F3 Transistor Specification

Transistor Code		STP130N10F3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Transistor SMD Code		130N10F3
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0096Ohm
Power Dissipation (Maximum)	PD	250W
Drain-Source Capacitance		373pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		38nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		57nC

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