STP11NM65N MOSFET Transistor

The STP11NM65N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP11NM65N transistor as follows.

STP11NM65N Transistor Specification

Transistor Code		STP11NM65N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Transistor SMD Code		11NM65N
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.455Ohm
Power Dissipation (Maximum)	PD	110W
Drain-Source Capacitance		50pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10.8nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		29nC

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