STP11NM60FDFP MOSFET Transistor

The STP11NM60FDFP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP11NM60FDFP transistor as follows.

STP11NM60FDFP Transistor Specification

Transistor Code		STP11NM60FDFP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220FP
Transistor SMD Code		P11NM60FDFP
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.45Ohm
Power Dissipation (Maximum)	PD	35W
Drain-Source Capacitance		350pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		16nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		28nC

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