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STP11NM60FD MOSFET Transistor

The STP11NM60FD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP11NM60FD transistor as follows.

Circuit diagram symbol of the STP11NM60FD transistor

STP11NM60FD Transistor Specification

Transistor Code STP11NM60FD
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220_TO220FP
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 11A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.45Ohm
Power Dissipation (Maximum) PD 160W
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 28nC

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