STP110N55F6 MOSFET Transistor

The STP110N55F6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP110N55F6 transistor as follows.

STP110N55F6 Transistor Specification

Transistor Code		STP110N55F6
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Transistor SMD Code		110N55F6
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	110A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0052Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		504pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		65nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		126nC

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