STP110N10F7 MOSFET Transistor

The STP110N10F7 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP110N10F7 transistor as follows.

STP110N10F7 Transistor Specification

Transistor Code		STP110N10F7
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Transistor SMD Code		110N10F7
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	110A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.007Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		992pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		36nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		72nC

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