STN8882D MOSFET Transistor

The STN8882D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STN8882D transistor as follows.

STN8882D Transistor Specification

Transistor Code		STN8882D
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251_TO-252
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	60A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.005Ohm
Power Dissipation (Maximum)	PD	40W
Drain-Source Capacitance		683.3pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		41.3nC

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