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STL3NM60N MOSFET Transistor

The STL3NM60N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STL3NM60N transistor as follows.

Circuit diagram symbol of the STL3NM60N transistor

STL3NM60N Transistor Specification

Transistor Code STL3NM60N
Transistor Type MOSFET
Control Channel Type N-Channel
Package POWERFLAT3.3X3.3HV
Transistor SMD Code 3NM60N
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 0.65A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.8Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 13pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 6.2nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 9.5nC

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