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STL10N60M2 MOSFET Transistor

The STL10N60M2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STL10N60M2 transistor as follows.

Circuit diagram symbol of the STL10N60M2 transistor

STL10N60M2 Transistor Specification

Transistor Code STL10N60M2
Transistor Type MOSFET
Control Channel Type N-Channel
Package POWERFLAT5X6HV
Transistor SMD Code 10N60M2
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 5.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.66Ohm
Power Dissipation (Maximum) PD 48W
Drain-Source Capacitance 22pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 8nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 13.5nC

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