STL10N60M2 MOSFET Transistor

The STL10N60M2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STL10N60M2 transistor as follows.

STL10N60M2 Transistor Specification

Transistor Code		STL10N60M2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POWERFLAT5X6HV
Transistor SMD Code		10N60M2
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	5.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.66Ohm
Power Dissipation (Maximum)	PD	48W
Drain-Source Capacitance		22pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		13.5nC

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