STK900 MOSFET Transistor

The STK900 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STK900 transistor as follows.

STK900 Transistor Specification

Transistor Code		STK900
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT89
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.9Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		17.4pF

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