STI57N65M5 MOSFET Transistor

The STI57N65M5 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STI57N65M5 transistor as follows.

STI57N65M5 Transistor Specification

Transistor Code		STI57N65M5
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2PAK
Transistor SMD Code		57N65M5
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	42A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.063Ohm
Power Dissipation (Maximum)	PD	250W
Drain-Source Capacitance		115pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		98nC

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