STI40N65M2 MOSFET Transistor

The STI40N65M2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STI40N65M2 transistor as follows.

STI40N65M2 Transistor Specification

Transistor Code		STI40N65M2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2PAK
Transistor SMD Code		40N65M2
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	32A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.099Ohm
Power Dissipation (Maximum)	PD	250W
Drain-Source Capacitance		102pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		56.5nC

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