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STI40N65M2 MOSFET Transistor

The STI40N65M2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STI40N65M2 transistor as follows.

Circuit diagram symbol of the STI40N65M2 transistor

STI40N65M2 Transistor Specification

Transistor Code STI40N65M2
Transistor Type MOSFET
Control Channel Type N-Channel
Package I2PAK
Transistor SMD Code 40N65M2
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 32A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.099Ohm
Power Dissipation (Maximum) PD 250W
Drain-Source Capacitance 102pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 10nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 56.5nC

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