STI150N10F7 MOSFET Transistor

The STI150N10F7 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STI150N10F7 transistor as follows.

STI150N10F7 Transistor Specification

Transistor Code		STI150N10F7
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2PAK
Transistor SMD Code		150N10F7
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	110A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0042Ohm
Power Dissipation (Maximum)	PD	250W
Drain-Source Capacitance		1510pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		57nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		117nC

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