STI10NM60N MOSFET Transistor

The STI10NM60N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STI10NM60N transistor as follows.

STI10NM60N Transistor Specification

Transistor Code		STI10NM60N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2PAK
Transistor SMD Code		10NM60N
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.55Ohm
Power Dissipation (Maximum)	PD	70W
Drain-Source Capacitance		44pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		19nC

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