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STH8N80FI MOSFET Transistor

The STH8N80FI is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STH8N80FI transistor as follows.

Circuit diagram symbol of the STH8N80FI transistor

STH8N80FI Transistor Specification

Transistor Code STH8N80FI
Transistor Type MOSFET
Control Channel Type N-Channel
Package ISOWATT218
Drain-Source Voltage (Maximum) VDS 800V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 5.1A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.2Ohm
Power Dissipation (Maximum) PD 70W
Drain-Source Capacitance 2700pF
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 125nC

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