STH8N80 MOSFET Transistor

The STH8N80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STH8N80 transistor as follows.

STH8N80 Transistor Specification

Transistor Code		STH8N80
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO218
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	8.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.2Ohm
Power Dissipation (Maximum)	PD	180W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		125nC

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