STH6NA80FI MOSFET Transistor

The STH6NA80FI is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STH6NA80FI transistor as follows.

STH6NA80FI Transistor Specification

Transistor Code		STH6NA80FI
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ISOWATT218
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	3.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.4Ohm
Power Dissipation (Maximum)	PD	60W
Drain-Source Capacitance		1700pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		55nC

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