STH6N100 MOSFET Transistor

The STH6N100 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STH6N100 transistor as follows.

STH6N100 Transistor Specification

Transistor Code		STH6N100
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO218
Drain-Source Voltage (Maximum)	VDS	1000V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2Ohm
Power Dissipation (Maximum)	PD	180W
Drain-Source Capacitance		2800pF
Operating Junction Temperature (Maximum)		150°C

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