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STH65N06FI MOSFET Transistor

The STH65N06FI is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STH65N06FI transistor as follows.

Circuit diagram symbol of the STH65N06FI transistor

STH65N06FI Transistor Specification

Transistor Code STH65N06FI
Transistor Type MOSFET
Control Channel Type N-Channel
Package ISOWATT218
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 38A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.02Ohm
Power Dissipation (Maximum) PD 65W
Drain-Source Capacitance 2900pF
Operating Junction Temperature (Maximum) 150°C

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