STH65N06 MOSFET Transistor

The STH65N06 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STH65N06 transistor as follows.

STH65N06 Transistor Specification

Transistor Code		STH65N06
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO218
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	65A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.02Ohm
Power Dissipation (Maximum)	PD	180W
Drain-Source Capacitance		2900pF
Operating Junction Temperature (Maximum)		150°C

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