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STH65N05 MOSFET Transistor

The STH65N05 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STH65N05 transistor as follows.

Circuit diagram symbol of the STH65N05 transistor

STH65N05 Transistor Specification

Transistor Code STH65N05
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO218
Drain-Source Voltage (Maximum) VDS 50V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 65A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.02Ohm
Power Dissipation (Maximum) PD 180W
Drain-Source Capacitance 2900pF
Operating Junction Temperature (Maximum) 150°C

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