STH4N90FI MOSFET Transistor

The STH4N90FI is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STH4N90FI transistor as follows.

STH4N90FI Transistor Specification

Transistor Code		STH4N90FI
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ISOWATT218
Drain-Source Voltage (Maximum)	VDS	900V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3.2Ohm
Power Dissipation (Maximum)	PD	55W
Drain-Source Capacitance		1100pF
Operating Junction Temperature (Maximum)		150°C

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