STH33N20FI MOSFET Transistor

The STH33N20FI is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STH33N20FI transistor as follows.

STH33N20FI Transistor Specification

Transistor Code		STH33N20FI
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ISOWATT218
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.085Ohm
Power Dissipation (Maximum)	PD	70W
Drain-Source Capacitance		3600pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		125nC

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