STH26N25FI MOSFET Transistor

The STH26N25FI is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STH26N25FI transistor as follows.

STH26N25FI Transistor Specification

Transistor Code		STH26N25FI
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ISOWATT218
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.11Ohm
Power Dissipation (Maximum)	PD	70W
Drain-Source Capacitance		3800pF
Operating Junction Temperature (Maximum)		150°C

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