STH26N25 MOSFET Transistor

The STH26N25 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STH26N25 transistor as follows.

STH26N25 Transistor Specification

Transistor Code		STH26N25
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO218
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	26A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.11Ohm
Power Dissipation (Maximum)	PD	180W
Drain-Source Capacitance		3800pF
Operating Junction Temperature (Maximum)		150°C

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