STH185N10F3-6 MOSFET Transistor

The STH185N10F3-6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STH185N10F3-6 transistor as follows.

STH185N10F3-6 Transistor Specification

Transistor Code		STH185N10F3-6
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		H2PAK-6
Transistor SMD Code		185N10F3
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	180A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0045Ohm
Power Dissipation (Maximum)	PD	315W
Drain-Source Capacitance		786pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		97.1nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		114.6nC

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