STH12NA60 MOSFET Transistor

The STH12NA60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STH12NA60 transistor as follows.

STH12NA60 Transistor Specification

Transistor Code		STH12NA60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO218
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	6.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.6Ohm
Power Dissipation (Maximum)	PD	190W
Drain-Source Capacitance		3250pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		110nC

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