STH110N10F7-6 MOSFET Transistor

The STH110N10F7-6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STH110N10F7-6 transistor as follows.

STH110N10F7-6 Transistor Specification

Transistor Code		STH110N10F7-6
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		H2PAK-6
Transistor SMD Code		110N10F7
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	110A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0065Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		992pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		36nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		72nC

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