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STH110N10F7-6 MOSFET Transistor

The STH110N10F7-6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STH110N10F7-6 transistor as follows.

Circuit diagram symbol of the STH110N10F7-6 transistor

STH110N10F7-6 Transistor Specification

Transistor Code STH110N10F7-6
Transistor Type MOSFET
Control Channel Type N-Channel
Package H2PAK-6
Transistor SMD Code 110N10F7
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 110A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0065Ohm
Power Dissipation (Maximum) PD 150W
Drain-Source Capacitance 992pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 36nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 72nC

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