STFI26NM60N MOSFET Transistor

The STFI26NM60N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STFI26NM60N transistor as follows.

STFI26NM60N Transistor Specification

Transistor Code		STFI26NM60N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2PAKFP
Transistor SMD Code		26NM60N
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.165Ohm
Power Dissipation (Maximum)	PD	35W
Drain-Source Capacitance		115pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		25nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		60nC

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